Isothermal close space sublimation for II-VI semiconductor filling of porous matrices
نویسندگان
چکیده
منابع مشابه
Isothermal close space sublimation for II-VI semiconductor filling of porous matrices
Isothermal close space sublimation, a simple and low-cost physical vapour transport technique, was used to infiltrate ZnTe and CdSe semiconductors in porous silicon. The structure of the embedded materials was determined by X-ray diffraction analysis while Rutherford backscattering spectra allowed determining the composition profiles of the samples. In both cases, a constant composition of the ...
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Carbon films on the Si/SiO2 substrate are fabricated using modified method of close space sublimation at atmospheric pressure. The film properties have been characterized by micro-Raman and X-ray photoelectron spectroscopy and monochromatic ellipsometry methods. Ellipsometrical measurements demonstrated an increase of the silicon oxide film thickness in the course of manufacturing process. The ...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2012
ISSN: 1556-276X
DOI: 10.1186/1556-276x-7-409